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CNY70
Vishay Telefunken
Reflective Optical Sensor with Transistor Output
Description
The CNY70 has a compact construction where the emitting light source and the detector are arranged in the same direction to sense the presence of an object by using the reflective IR beam from the object. The operating wavelength is 950 nm. The detector consists of a phototransistor.
Applications
D Optoelectronic scanning and switching devices
i.e., index sensing, coded disk scanning etc. (optoelectronic encoder assemblies for transmission sensing).
94 9320
Features
Marking aerea
D Compact construction in center-to-center spacing
of 0.1'
D No setting required D High signal output D Low temperature coefficient D Detector provided with optical filter D Current Transfer Ratio (CTR) of typical 5%
E
D
Top view
95 10930
Order Instruction
Ordering Code CNY70 Sensing Distance 0.3 mm Remarks
Document Number 83751 Rev. A4, 05-Apr-00
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CNY70
Vishay Telefunken Absolute Maximum Ratings
Input (Emitter)
Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Value 5 50 3 100 100 Unit V mA A mW C
tp 10 ms Tamb 25C
Output (Detector)
Parameter Collector emitter voltage Emitter collector voltage Collector current Power dissipation Junction temperature Test Conditions Symbol VCEO VECO IC PV Tj Value 32 7 50 100 100 Unit V V mA mW C
Tamb 25C
Coupler
Parameter Total power dissipation Ambient temperature range Storage temperature range Soldering temperature Test Conditions Tamb 25C Symbol Ptot Tamb Tstg Tsd Value 200 -55 to +85 -55 to +100 260 Unit mW C C C
2 mm from case, t 5 s
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Document Number 83751 Rev. A4, 05-Jun-00
CNY70
Vishay Telefunken Electrical Characteristics (Tamb = 25C)
Input (Emitter)
Parameter Forward voltage Test Conditions IF = 50 mA Symbol VF Min. Typ. 1.25 Max. 1.6 Unit V
Output (Detector)
Parameter Collector emitter voltage Emitter collector voltage Collector dark current Test Conditions IC = 1 mA IE = 100 mA VCE = 20 V, If = 0, E = 0 Symbol VCEO VECO ICEO Min. 32 5 Typ. Max. Unit V V nA
200
Coupler
Parameter Collector current Test Conditions Symbol Min. Typ. VCE = 5 V, IF = 20 mA, IC1) 0.3 1.0 d = 0.3 mm (figure 1) Cross talk current VCE = 5 V, IF = 20 mA ICX2) (figure 1) Collector emitter satuIF = 20 mA, IC = 0.1 mA, VCEsat1) ration voltage d = 0.3 mm (figure 1) 1) Measured with the `Kodak neutral test card', white side with 90% diffuse reflectance 2) Measured without reflecting medium Max. Unit mA nA V
600 0.3
d
Reflecting medium (Kodak neutral test card)
~ ~ ~
~ ~ ~
Emitter
Detector
A
C
C
E
95 10808
Figure 1. Test circuit
Document Number 83751 Rev. A4, 05-Apr-00
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CNY70
Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified)
300 P tot - Total Power Dissipation ( mW ) IC - Collector Current ( mA ) 10 Kodak Neutral Card (White Side) d=0.3 VCE=5V
Coupled device 200
1
0.1
Phototransistor 100 IR-diode
0.01
0 0
95 11071
0.001 25 50 75 100
95 11065
0.1
1
10
100
Tamb - Ambient Temperature ( C )
IF - Forward Current ( mA )
Figure 2. Total Power Dissipation vs. Ambient Temperature
1000.0 I C - Collector Current ( mA )
Figure 5. Collector Current vs. Forward Current
10 Kodak Neutral Card (White Side) d=0.3 1 IF = 50 mA 20 mA 10 mA 5 mA 0.1 2 mA 1 mA 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage ( V )
95 11066
I F - Forward Current ( mA )
100.0
10.0
1.0
0.1
96 11862
0.1
1
10
100
VCE - Collector Emitter Voltage ( V )
Figure 3. Forward Current vs. Forward Voltage
CTR rel - Relative Current Transfer Ratio 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -30 -20 -10 0 10 20 30 40 50 60 70 80 Tamb - Ambient Temperature ( C )
Figure 6. Collector Current vs. Collector Emitter Voltage
100.0 CTR - Current Transfer Ratio ( % )
VCE=5V IF=20mA d=0.3
Kodak neutral card (white side) 10.0
1.0 VCE=5V d=0.3 0.1 0.1
1.0
10.0
100.0
96 11913
96 11914
IF - Forward Current ( mA )
Figure 4. Relative Current Transfer Ratio vs. Ambient Temperature
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Figure 7. Current Transfer Ratio vs. Forward Current
Document Number 83751 Rev. A4, 05-Jun-00
CNY70
Vishay Telefunken
10.0 CTR - Current Transfer Ratio ( % ) I e rel - Relative Radiant Intensity I c rel - Relative Collector Current IF=50mA 0 10 20 30
1mA 20mA 1.0 5mA 2mA Kodak neutral card (white side) d=0.3 0.1 0.1 10mA
40 1.0 0.9 0.8 0.7 50 60 70 80
1.0
10.0
100.0
95 11063
0.6
0.4
0.2
0
0.2
0.4
0.6
96 12001
VCE - Collector Emitter Voltage ( V )
Figure 8. Current Transfer Ratio vs. Collector Emitter Voltage
10 I C - Collector Current ( mA )
Figure 10. Relative Radiant Intensity/Collector Current vs. Displacement
1 d
0.1 VCE=5V IF=20mA 0.001 0 2 4 6 8 10
95 11069
d - Distance ( mm )
Figure 9. Collector Current vs. Distance
1.0 I Crel - Relative Collector Current 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0
96 11915
d = 5 mm 4 mm 3 mm 2 mm 1 mm 0 VCE = 5 V IF = 20 mA
E
1.5 D d E D
0 s 5mm 10mm 0 s 5mm 10mm
1
2
3
4
5
6
7
8
9
10
11
s - Displacement ( mm )
Figure 11. Relative Collector Current vs. Displacement
Document Number 83751 Rev. A4, 05-Apr-00
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CNY70
Vishay Telefunken Dimensions of CNY70 in mm
95 11345
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Document Number 83751 Rev. A4, 05-Jun-00
CNY70
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 83751 Rev. A4, 05-Apr-00
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